Nexperia B.V. 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ PEMH2,315

Description
NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD12 PNP/PNP complement: PEMB2 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Controlling IC inputs Replacement for general purpose transistors in digital applications
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Description
NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD12 PNP/PNP complement: PEMB2 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Controlling IC inputs Replacement for general purpose transistors in digital applications
Request a Quote
Datasheet
Datasheet Summary
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NPN/NPN dual resistor-equipped transistor with 50 V collector-emitter voltage and 100 mA output current capability, featuring integrated 47 kΩ bias resistors R1 and R2, packaged in a SOT666 surface-mount case measuring 1.6 mm × 1.2 mm × 0.55 mm. Maximum power dissipation is 300 mW at 25 °C ambient temperature, with a junction temperature rating of 150 °C. The device meets IEC 60134 absolute maximum rating standards and is not automotive qualified.

Datasheet Summary
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NPN/NPN dual resistor-equipped transistor with 50 V collector-emitter voltage and 100 mA output current capability, featuring integrated 47 kΩ bias resistors R1 and R2, packaged in a SOT666 surface-mount case measuring 1.6 mm × 1.2 mm × 0.55 mm. Maximum power dissipation is 300 mW at 25 °C ambient temperature, with a junction temperature rating of 150 °C. The device meets IEC 60134 absolute maximum rating standards and is not automotive qualified.

Suppliers

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Product
Description
Supplier Links
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ - PEMH2,315 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ
PEMH2,315
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ PEMH2,315
NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PEMD12 PNP/PNP complement: PEMB2 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Low current peripheral driver Controlling IC inputs Replacement for general purpose transistors in digital applications

NPN/NPN double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PEMD12

PNP/PNP complement: PEMB2

Features and benefits

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs

Applications

  • Low current peripheral driver
  • Controlling IC inputs
  • Replacement for general purpose transistors in digital applications
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - PEMH2,315-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
PEMH2,315-ND
Bipolar Transistor Arrays, Pre-Biased PEMH2,315-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Buy Now Datasheet
Singapore, Singapore
50V Bipolar Transistor
293-PEMH2,315
50V Bipolar Transistor 293-PEMH2,315
TRANS PREBIAS 2NPN 50V SOT666 Product overview: PEMH2,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PEMH2,315 can be used for catalog matching and distributor lookup.

TRANS PREBIAS 2NPN 50V SOT666 Product overview: PEMH2,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PEMH2,315 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMH2,315 - 1087485-PEMH2,315 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMH2,315
1087485-PEMH2,315
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMH2,315 1087485-PEMH2,315
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1087485-PEMH2,315 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-666 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 150mV @ 500μA, 10mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 80 @ 5mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087485-PEMH2,315
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-666
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 80 @ 5mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PEMH2,315 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PEMH2,315
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PEMH2,315
TRANS PREBIAS 2NPN 50V SOT666

TRANS PREBIAS 2NPN 50V SOT666

Supplier's Site
Rf Transistor Rohs Compliant Nexperia - 29AK3375 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor Rohs Compliant Nexperia
29AK3375
Rf Transistor Rohs Compliant Nexperia 29AK3375
RF TRANSISTOR ROHS COMPLIANT: YES

RF TRANSISTOR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors RF Transistors
Product Number PEMH2,315 PEMH2,315-ND 293-PEMH2,315 1087485-PEMH2,315 PEMH2,315 29AK3375
Product Name 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ Bipolar Transistor Arrays, Pre-Biased 50V Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PEMH2,315 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Rf Transistor Rohs Compliant Nexperia
Package Type SOT666 SOT666 SOT-563, SOT-666 Tape & Reel (TR) SOT3; SOT-666 TO-3
Polarity NPN NPN; 2 NPN - Pre-Biased (Dual)
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
IC(max) 100000 milliamps 100 milliamps
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