Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
Applications
MOSFET N-CH 60V 34A D2PAK Product overview: PHB32N06LT,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 34A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PHB32N06LT,118 can be used for catalog matching and distributor lookup.
N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK
N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK
N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087785-PHB32N06LT,1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 97W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 34A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 17nC @ 5V
Max Input Capacitance: 1280pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 37 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
(PRICE/TC) MOSFET, N-CH, 60V, 34A, TO-263, TRANSISTOR POLARITY N CHANNEL, CONTINUOUS DRAIN CURRENT ID 34A, DRAIN SOURCE VOLTAGE VDS 60V, ON RESISTANCE RDS(ON) 0.026OHM, RDS(ON) TEST VOLTAGE VGS 10V, THRESHOLD VOLTAGE VGS 1.5V, POWER DISSIPATIONROHS COMPLI. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 60V 34A D2PAK
MOSFET, N-CH, 60V, 34A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 60V 34A D2PAK
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PHB32N06LT,118 | 278-PHB32N06LT,118 | 1727-4764-6-ND | 1087785-PHB32N06LT,118 | 48604083 | PHB32N06LT,118 | 32AC8180 | PHB32N06LT,118 |
| Product Name | N-channel TrenchMOS logic level FET | 60V 34A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHB32N06LT,118 | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 34A, To-263; Transistor Polarity Nexperia | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | SOT404 | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 97 milliwatts | 97000 milliwatts | 97000 milliwatts |
