Nexperia B.V. N-channel TrenchMOS logic level FET PHB32N06LT,118

Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Suitable for logic level gate drive sources Applications General purpose switching Switched-mode power supplies
Request a Quote Datasheet
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Suitable for logic level gate drive sources Applications General purpose switching Switched-mode power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel TrenchMOS logic level FET - PHB32N06LT,118 - Nexperia B.V.
Nijmegen, Netherlands
N-channel TrenchMOS logic level FET
PHB32N06LT,118
N-channel TrenchMOS logic level FET PHB32N06LT,118
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Suitable for logic level gate drive sources Applications General purpose switching Switched-mode power supplies

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits

  • Suitable for logic level gate drive sources

Applications

  • General purpose switching
  • Switched-mode power supplies
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHB32N06LT,118 - 1087785-PHB32N06LT,118 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHB32N06LT,118
1087785-PHB32N06LT,118
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHB32N06LT,118 1087785-PHB32N06LT,118
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1087785-PHB32N06LT,1 18 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 97W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 1280pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 37 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087785-PHB32N06LT,118
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 97W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 34A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 17nC @ 5V
Max Input Capacitance: 1280pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 37 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
60V 34A MOSFET Transistor
278-PHB32N06LT,118
60V 34A MOSFET Transistor 278-PHB32N06LT,118
MOSFET N-CH 60V 34A D2PAK Product overview: PHB32N06LT,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 34A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PHB32N06LT,118 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 34A D2PAK Product overview: PHB32N06LT,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 34A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PHB32N06LT,118 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-4764-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4764-6-ND
Single FETs, MOSFETs 1727-4764-6-ND
N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK

N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4764-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4764-1-ND
Single FETs, MOSFETs 1727-4764-1-ND
N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK

N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-4764-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-4764-2-ND
Single FETs, MOSFETs 1727-4764-2-ND
N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK

N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK

Buy Now Datasheet
Mosfet, N-Ch, 60V, 34A, To-263; Transistor Polarity Nexperia - 32AC8180 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 34A, To-263; Transistor Polarity Nexperia
32AC8180
Mosfet, N-Ch, 60V, 34A, To-263; Transistor Polarity Nexperia 32AC8180
MOSFET, N-CH, 60V, 34A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 60V, 34A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PHB32N06LT,118 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PHB32N06LT,118
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PHB32N06LT,118
MOSFET N-CH 60V 34A D2PAK

MOSFET N-CH 60V 34A D2PAK

Supplier's Site
Single FETs, MOSFETs - PHB32N06LT,118 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PHB32N06LT,118
Single FETs, MOSFETs PHB32N06LT,118
MOSFET N-CH 60V 34A D2PAK

MOSFET N-CH 60V 34A D2PAK

Supplier's Site Datasheet
Transistor - 48604083 - Radwell International
Willingboro, NJ, United States
Transistor
48604083
Transistor 48604083
(PRICE/TC) MOSFET, N-CH, 60V, 34A, TO-263, TRANSISTOR POLARITY N CHANNEL, CONTINUOUS DRAIN CURRENT ID 34A, DRAIN SOURCE VOLTAGE VDS 60V, ON RESISTANCE RDS(ON) 0.026OHM, RDS(ON) TEST VOLTAGE VGS 10V, THRESHOLD VOLTAGE VGS 1.5V, POWER DISSIPATIONROHS COMPLI. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC) MOSFET, N-CH, 60V, 34A, TO-263, TRANSISTOR POLARITY N CHANNEL, CONTINUOUS DRAIN CURRENT ID 34A, DRAIN SOURCE VOLTAGE VDS 60V, ON RESISTANCE RDS(ON) 0.026OHM, RDS(ON) TEST VOLTAGE VGS 10V, THRESHOLD VOLTAGE VGS 1.5V, POWER DISSIPATIONROHS COMPLI. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Radwell International
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PHB32N06LT,118 1087785-PHB32N06LT,118 278-PHB32N06LT,118 1727-4764-6-ND 32AC8180 PHB32N06LT,118 PHB32N06LT,118 48604083
Product Name N-channel TrenchMOS logic level FET TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHB32N06LT,118 60V 34A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 60V, 34A, To-263; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs Transistor
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
Package Type SOT404 TO-263; SOT3; D2PAK Tape & Reel (TR) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
V(BR)DSS 60 volts 60 volts 60 volts
PD 97000 milliwatts 97 milliwatts 97000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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