Nexperia B.V. 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTD123ET-QR

Description
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123ET-Q Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs ± 10 % resistor ratio tolerance Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital application in automotive and industrial segments Controlling IC inputs Cost-saving alternative to BC817 series in digital applications Switching loads
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Description
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123ET-Q Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs ± 10 % resistor ratio tolerance Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital application in automotive and industrial segments Controlling IC inputs Cost-saving alternative to BC817 series in digital applications Switching loads
Request a Quote
Datasheet
Datasheet Summary
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NPN Resistor-Equipped Transistor (RET) in a small SOT23 surface-mounted plastic package with built-in bias resistors R1 = 2.2 kΩ and R2 = 2.2 kΩ, rated for 50 V collector-emitter voltage and 500 mA output current. The device has a 2.9 mm × 1.3 mm × 1 mm body and is qualified to AEC-Q101 for automotive applications.

Datasheet Summary
Powered by GS/AI

NPN Resistor-Equipped Transistor (RET) in a small SOT23 surface-mounted plastic package with built-in bias resistors R1 = 2.2 kΩ and R2 = 2.2 kΩ, rated for 50 V collector-emitter voltage and 500 mA output current. The device has a 2.9 mm × 1.3 mm × 1 mm body and is qualified to AEC-Q101 for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ - PDTD123ET-QR - Nexperia B.V.
Nijmegen, Netherlands
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTD123ET-QR
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTD123ET-QR
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123ET-Q Features and benefits Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs ± 10 % resistor ratio tolerance Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Digital application in automotive and industrial segments Controlling IC inputs Cost-saving alternative to BC817 series in digital applications Switching loads

NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTB123ET-Q

Features and benefits

  • Built-in bias resistors
  • Simplifies circuit design
  • 500 mA output current capability
  • Reduces component count
  • Reduces pick and place costs
  • ± 10 % resistor ratio tolerance
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Digital application in automotive and industrial segments
  • Controlling IC inputs
  • Cost-saving alternative to BC817 series in digital applications
  • Switching loads
Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PDTD123ET-QRTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PDTD123ET-QRTR-ND
Single, Pre-Biased Bipolar Transistors 1727-PDTD123ET-QRTR-ND
PDTD123ET-Q/SOT23/TO -236AB

PDTD123ET-Q/SOT23/TO-236AB

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PDTD123ET-QRDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PDTD123ET-QRDKR-ND
Single, Pre-Biased Bipolar Transistors 1727-PDTD123ET-QRDKR-ND
PDTD123ET-Q/SOT23/TO -236AB

PDTD123ET-Q/SOT23/TO-236AB

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-PDTD123ET-QRCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-PDTD123ET-QRCT-ND
Single, Pre-Biased Bipolar Transistors 1727-PDTD123ET-QRCT-ND
PDTD123ET-Q/SOT23/TO -236AB

PDTD123ET-Q/SOT23/TO-236AB

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PDTD123ET-QR 1727-PDTD123ET-QRTR-ND
Product Name 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Single, Pre-Biased Bipolar Transistors
Package Type SOT23; SOT23 SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
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