NPN Resistor-Equipped Transistor (RET) with built-in bias resistors R1 = 10 kΩ and R2 = 10 kΩ, designed for switching and digital control applications, in a SOT23 (2.9 mm × 1.3 mm × 1 mm) surface-mounted plastic package. It has a maximum collector-emitter voltage of 50 V, a continuous collector current of 500 mA, a power dissipation of up to 460 mW on a 4-layer PCB, and an operating junction temperature up to 175 °C. The resistor ratio tolerance is ±10 %, and it is AEC-Q101 qualified for automotive use.
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTB114ET
Features and benefits
Applications
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 225MHz 320mW Surface Mount TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 225MHz 320mW Surface Mount TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 225MHz 320mW Surface Mount TO-236AB
Win Source Part Number: 1112033-PDTD114ETR
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 225 MHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Alternative Parts (Cross-Reference): 934031040215;
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Nexperia USA Inc.
Other Names: 1727-7552-2,1727-755
Base Product Number: PDTD114
PDTD1xxxT series - 500 mA, 50 V NPN resistor-equipped transistors TO-236 3-Pin Product overview: PDTD114ETR from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500 mA, 50 V. Search-friendly keywords include transistor, BJT, switching, amplification, 500 mA, 50 V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTD114ETR can be used for catalog matching and distributor lookup.
Bipolar Transistors - Pre-Biased 500 mA, 50 V NPN resistor-equipped
TRANS PREBIAS NPN 50V TO236AB
RF TRANSISTOR ROHS COMPLIANT: YES
70@50mA,5V 460mW 500mA 50V 100nA 1 NPN - Pre Biased SOT-23 Digital Transistors ROHS
TRANS PREBIAS NPN 0.425W
| Nexperia B.V. | Rochester Electronics | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | PDTD114ETR | PDTD114ETR | 1727-7552-1-ND | 1112033-PDTD114ETR | 292-PDTD114ETR | PDTD114ETR | PDTD114ETR | 29AK3182 | PDTD114ETR | PDTD114ETR |
| Product Name | 50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased | 500 mA 50 V Bipolar Transistor | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Rf Transistor Rohs Compliant Nexperia | Triode/MOS Tube/Transistor >> Digital Transistors | Single, Pre-Biased Bipolar Transistors | |
| Package Type | SOT23; SOT23 SOT23 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| Polarity | NPN | NPN | NPN | NPN | NPN - Pre-Biased; NPN | |||||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||||
| Transistor Grade / Operating Range | Automotive | |||||||||
| IC(max) | 500 milliamps | 500 milliamps | 500 milliamps |
