Nexperia B.V. 60 V, 3 A NPN high power bipolar transistor PHPT60603NY-QX

Description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY-Q Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Power management Load switch Linear mode voltage regulator Backlighting apllications
  • 60 V, 3 A NPN high power bipolar transistor - PHPT60603NY-QX - Nexperia B.V.
    Nexperia B.V.
  • Single Bipolar Transistors - 1727-PHPT60603NY-QXDKR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 1727-PHPT60603NY-QXTR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 1727-PHPT60603NY-QXCT-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY-Q Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Power management Load switch Linear mode voltage regulator Backlighting apllications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 3 A NPN high power bipolar transistor - PHPT60603NY-QX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, 3 A NPN high power bipolar transistor
PHPT60603NY-QX
60 V, 3 A NPN high power bipolar transistor PHPT60603NY-QX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY-Q Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Power management Load switch Linear mode voltage regulator Backlighting apllications

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

PNP complement: PHPT60603PY-Q

Features and benefits

  • High thermal power dissipation capability
  • High temperature applications up to 175 °C
  • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
  • High energy efficiency due to less heat generation
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Power management
  • Load switch
  • Linear mode voltage regulator
  • Backlighting apllications
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PHPT60603NY-QXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PHPT60603NY-QXDKR-ND
Single Bipolar Transistors 1727-PHPT60603NY-QXDKR-ND
PHPT60603NY-Q/SOT669 /LFPAK

PHPT60603NY-Q/SOT669/LFPAK

Buy Now Datasheet
Single Bipolar Transistors - 1727-PHPT60603NY-QXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PHPT60603NY-QXTR-ND
Single Bipolar Transistors 1727-PHPT60603NY-QXTR-ND
PHPT60603NY-Q/SOT669 /LFPAK

PHPT60603NY-Q/SOT669/LFPAK

Buy Now Datasheet
Single Bipolar Transistors - 1727-PHPT60603NY-QXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PHPT60603NY-QXCT-ND
Single Bipolar Transistors 1727-PHPT60603NY-QXCT-ND
PHPT60603NY-Q/SOT669 /LFPAK

PHPT60603NY-Q/SOT669/LFPAK

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Power Bipolar Transistors Transistors
Product Number PHPT60603NY-QX 1727-PHPT60603NY-QXDKR-ND
Product Name 60 V, 3 A NPN high power bipolar transistor Single Bipolar Transistors
VCEO 60 volts
IC(max) 3 milliamps
PD 1.25 milliwatts
TJ 175 C (347 F)
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