NPN high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted plastic package, rated for 60 V collector-emitter voltage and 3 A continuous collector current, with a peak collector current of 8 A for pulses up to 1 ms. The junction temperature rating is 175 °C, and the device is qualified to AEC-Q101 for automotive applications. Power dissipation reaches up to 25 W when mounted on a base with thermal path. The pinout includes three emitter terminals and one base terminal.
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60603PY-Q
Features and benefits
Applications
PHPT60603NY-Q/SOT669
PHPT60603NY-Q/SOT669
PHPT60603NY-Q/SOT669
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Power Bipolar Transistors | Transistors |
| Product Number | PHPT60603NY-QX | 1727-PHPT60603NY-QXDKR-ND |
| Product Name | 60 V, 3 A NPN high power bipolar transistor | Single Bipolar Transistors |
| VCEO | 60 volts | |
| IC(max) | 3 milliamps | |
| PD | 1.25 milliwatts | |
| TJ | 175 C (347 F) |
