Nexperia B.V. TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHC21025,118 PHC21025,118

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1042399-PHC21025,118
Packaging: Cut Reel
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.5A, 2.3A
Gate-Source Threshold Voltage: 2.8V @ 1mA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 250pF @ 20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Communications & Networking, Consumer Electronics, Power Management

PHC21025 - Complementary intermediate level FET SOIC 8-Pin Product overview: PHC21025,118 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PHC21025,118 can be used for catalog matching and distributor lookup.

Mosfet Array N and P-Channel 30V 3.5A, 2.3A 2W Surface Mount 8-SO