P-Channel 60V 2.8A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
MOSFET P-CH 60V 2.8A SOT223-4
MOSFET P-CH 60V 2.8A SOT223-4
Small Signal Field-Effect Transistor
Win Source Part Number: 1350708-ISP12DP06NMX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 1.8W (Ta) , 4.2W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: ISP12DP06
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 520µA
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
MOSFET P-CH 60V 2.8A SOT223-4 Product overview: ISP12DP06NMXTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISP12DP06NMXTSA1
MOSFET P-CH 60V 2.8A SOT223-4
MOSFET, P-CH, -60V, -2.8A, 150DEG C ROHS COMPLIANT: YES
MOSFET P-CH 60V SOT223-4
MOSFET P-CH 60V 2.8A SOT223-4
| DigiKey | Rochester Electronics | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 448-ISP12DP06NMXTSA1TR-ND | ISP12DP06NMXTSA1 | 2439269 | 1350708-ISP12DP06NMXTSA1 | 278-ISP12DP06NMXTSA1 | ISP12DP06NMXTSA1 | ISP12DP06NMXTSA1 | 42AH1862 | 376-ISP12DP06NMXTSA1 | ISP12DP06NMXTSA1 |
| Product Name | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | 60V 2.8A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -60V, -2.8A, 150Deg C Rohs Compliant Infineon | MOSFET P-CH 60V SOT223-4 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||||||
| Package Type | TO-261-4, TO-261AA | PG-SOT223-4 | SOT223; SOT-223 | SOT3 | Tape & Reel (TR) | TO-261-4, TO-261AA | TO-3 | TO-261-4, TO-261AA | ||
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| PD | 1800 to 4200 milliwatts | 4.2 milliwatts | 1800 milliwatts | 1800 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
