Infineon Technologies AG Bipolar Transistors - BJT MMBT2907ALT1XT

Description
Bipolar Transistors - BJT AF TRANS GP BJT PNP 60V 0.6A
Description
Bipolar Transistors - BJT AF TRANS GP BJT PNP 60V 0.6A
Datasheet
Datasheet Summary
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The MMBT2907A is a PNP silicon switching transistor in an SOT23 package, designed for general-purpose switching applications. It has a collector-emitter voltage rating of 60 V, a maximum collector current of 600 mA, and a total power dissipation of 330 mW at 77 °C. The junction temperature range is -65 °C to 150 °C, with a thermal resistance from junction to soldering point of ≤ 220 K/W. The device is RoHS compliant and qualified to AEC-Q101. DC current gain (hFE) ranges from 50 to 300 depending on collector current, with collector-emitter saturation voltage up to 1.6 V at 500 mA. Transition frequency is 200 MHz.

Datasheet Summary
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The MMBT2907A is a PNP silicon switching transistor in an SOT23 package, designed for general-purpose switching applications. It has a collector-emitter voltage rating of 60 V, a maximum collector current of 600 mA, and a total power dissipation of 330 mW at 77 °C. The junction temperature range is -65 °C to 150 °C, with a thermal resistance from junction to soldering point of ≤ 220 K/W. The device is RoHS compliant and qualified to AEC-Q101. DC current gain (hFE) ranges from 50 to 300 depending on collector current, with collector-emitter saturation voltage up to 1.6 V at 500 mA. Transition frequency is 200 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MMBT2907ALT1XT
Bipolar Transistors - BJT MMBT2907ALT1XT
Bipolar Transistors - BJT AF TRANS GP BJT PNP 60V 0.6A

Bipolar Transistors - BJT AF TRANS GP BJT PNP 60V 0.6A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MMBT2907ALT1XT
Product Name Bipolar Transistors - BJT
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