MOSFET P-CH 60V 3.7A SOT223-4 Product overview: ISP650P06NMXTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISP650P06NMXTSA1
P-Channel 60V 3.7A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
P-Channel 60V 3.7A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
P-Channel 60V 3.7A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
MOSFET P-CH 60V 3.7A SOT223-4
Win Source Part Number: 1338222-ISP650P06NMX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 1.8W (Ta) , 4.2W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 42 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: ISP650
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
MOSFET P-CH 60V 3.7A SOT223-4
MOSFET, P-CH, -60V, -3.7A, 150DEG C ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-ISP650P06NMXTSA1 | 448-ISP650P06NMXTSA1CT-ND | ISP650P06NMXTSA1 | 2439277 | 1338222-ISP650P06NMXTSA1 | ISP650P06NMXTSA1 | 42AH1865 | ISP650P06NMXTSA1 |
| Product Name | 60V 3.7A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -60V, -3.7A, 150Deg C Rohs Compliant Infineon | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| Transconductance | 0.0083 kS | |||||||
| PD | 4.2 milliwatts | 1800 milliwatts | 1800 to 4200 milliwatts |
