SMALL SIGNAL MOSFETS PG-SOT223-4
P-Channel 100V 2.1A (Ta), 3.9A (Tc) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4
P-Channel 100V 2.1A (Ta), 3.9A (Tc) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4
P-Channel 100V 2.1A (Ta), 3.9A (Tc) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4
ISP16DP10LM - SMALL SIGNAL MOSFETS
SMALL SIGNAL MOSFETS PG-SOT223-4 Product overview: ISP16DP10LMXTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISP16DP10LMXTSA1
Win Source Part Number: 1339476-ISP16DP10LMX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 100 V
Power Dissipation (Max): 1.8W (Ta) , 5W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: ISP16D
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) , 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
MOSFET, P-CH, 100V, SOT-223-4 ROHS COMPLIANT: YES
SMALL SIGNAL MOSFETS PG-SOT223-4
| ODG (Origin Data Global) | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ISP16DP10LMXTSA1 | 448-ISP16DP10LMXTSA1TR-ND | ISP16DP10LMXTSA1 | 278-ISP16DP10LMXTSA1 | 2354877P | 1339476-ISP16DP10LMXTSA1 | 90AJ6125 | ISP16DP10LMXTSA1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Mosfet, P-Ch, 100V, Sot-223-4 Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 2100 milliamps | |||||||
| PD | 1800 milliwatts | 5 milliwatts | 1800 to 5000 milliwatts |
