Win Source Part Number: 1114584-ISP75DP06LMX
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 77µA
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-ISP75DP06LMXTSA
Base Product Number: ISP75D
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET P-CH 60V 1.1A SOT223-4 Product overview: ISP75DP06LMXTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISP75DP06LMXTSA1
P-Channel 60V 1.1A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
P-Channel 60V 1.1A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
P-Channel 60V 1.1A (Ta) 1.8W (Ta), 4.2W (Tc) Surface Mount PG-SOT223-4
MOSFET P-CH 60V 1.1A SOT223-4
MOSFET P-CH 60V 1.1A SOT223-4
MOSFET, P-CH, -60V, -1.1A, 150DEG C ROHS COMPLIANT: YES
| RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2439278 | 1114584-ISP75DP06LMXTSA1 | 278-ISP75DP06LMXTSA1 | 448-ISP75DP06LMXTSA1CT-ND | ISP75DP06LMXTSA1 | ISP75DP06LMXTSA1 | ISP75DP06LMXTSA1 | 42AH1866 |
| Product Name | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 60V 1.1A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -60V, -1.1A, 150Deg C Rohs Compliant Infineon |
| Package Type | SOT223; SOT-223 | SOT3 | Tape & Reel (TR) | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-3 | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| PD | 1800 to 4200 milliwatts | 4.2 milliwatts | 1800 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| MOSFET Operating Mode | Enhancement |
