Radiation hardened N-channel MOSFET for space applications, housed in a TO-205AF (TO-39) package, with a drain-to-source breakdown voltage of 500V, continuous drain current of 2.5A at 25°C, and static drain-to-source on-state resistance of 1.77Ω maximum. It features single event effect hardness, neutron tolerance, hermetic sealing, and is qualified to MIL-PRF-19500 with a total ionizing dose rating of 100 krad(Si). ESD rating is Class 1C per MIL-STD-750, Method 1020.
Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL
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Potential Applications
Slash Sheet
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANTXVR2N7464T2 |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANTXVR2N7464T2 |
| Polarity | N-Channel; N |