Infineon Technologies AG Transistors ISP26DP06NMS

Description
60V 1.9A 1.8W 260mΩ@10V,1.9A 4V@270uA 1 Piece P-Channel SOT-223-3 MOSFETs ROHS
Description
60V 1.9A 1.8W 260mΩ@10V,1.9A 4V@270uA 1 Piece P-Channel SOT-223-3 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - ISP26DP06NMS - ODG (Origin Data Global)
Shenzhen, China
Transistors
ISP26DP06NMS
Transistors ISP26DP06NMS
60V 1.9A 1.8W 260mΩ@10V,1.9A 4V@270uA 1 Piece P-Channel SOT-223-3 MOSFETs ROHS

60V 1.9A 1.8W 260mΩ@10V,1.9A 4V@270uA 1 Piece P-Channel SOT-223-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number ISP26DP06NMS
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 436276 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
45 V, 500 mA PNP general-purpose transistors - BC807-25QBZ - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT8015 SOT8015
View Details
6 suppliers
Single IGBTs - 448-AIKP20N60CTAKSA1-ND - DigiKey
Infineon Technologies AG
Specs
Transistor Type IGBT
Package Type TO-220; TO-220-3
View Details
3 suppliers
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details