Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVR2N7422U JANTXVR2N7422U

Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVR2N7422U - JANTXVR2N7422U - Infineon Technologies AG
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Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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P-channel radiation-hardened MOSFET for space applications, housed in a hermetic ceramic SMD-1 package, with a drain-source breakdown voltage of -100V, continuous drain current of -22A at 25°C, and static on-resistance of 80mΩ. It has a total gate charge of 200nC and is rated for 100 krad(Si) total ionizing dose. The device meets JANS screening flow per MIL-PRF-19500, is qualified for single event effect hardness, and has an ESD rating of Class 2 per MIL-STD-750, Method 1020. Weight is 2.6g typical.

Datasheet Summary
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P-channel radiation-hardened MOSFET for space applications, housed in a hermetic ceramic SMD-1 package, with a drain-source breakdown voltage of -100V, continuous drain current of -22A at 25°C, and static on-resistance of 80mΩ. It has a total gate charge of 200nC and is rated for 100 krad(Si) total ionizing dose. The device meets JANS screening flow per MIL-PRF-19500, is qualified for single event effect hardness, and has an ESD rating of Class 2 per MIL-STD-750, Method 1020. Weight is 2.6g typical.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVR2N7422U - JANTXVR2N7422U - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVR2N7422U
JANTXVR2N7422U
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVR2N7422U JANTXVR2N7422U
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL

Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, QPL

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Proton tolerant
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Surface mount
  • Light weight
  • ESD Rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

  • Isolated DC-DC converters
  • Motor drives
  • Electric propulsion
  • Thermal management

Slash sheet


Similar Parts

IRHN9150

SMD-1, 100 krad(Si) TID, COTS

IRHN9150D

SMD-1, 100 krad(Si) TID, COTS, On DBC carrier

JANTXVR2N7422U

SMD-1, 100 krad(Si) TID, QPL

JANSR2N7422U

SMD-1, 100 krad(Si) TID, QPL

IRHN93150

SMD-1, 300 krad(Si) TID, COTS

JANSF2N7422U

SMD-1, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number JANTXVR2N7422U
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVR2N7422U
Polarity P-Channel; P
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