Infineon Technologies AG Single FETs, MOSFETs IRLZ24NLPBF

Description
N-Channel 55V 18A (Tc) 3.8W (Ta), 45W (Tc) Through Hole TO-262
  • Single FETs, MOSFETs - IRLZ24NLPBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24NLPBF - 1047699-IRLZ24NLPBF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLZ24NLPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
N-Channel 55V 18A (Tc) 3.8W (Ta), 45W (Tc) Through Hole TO-262
Request a Quote Datasheet

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Single FETs, MOSFETs - IRLZ24NLPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRLZ24NLPBF-ND
Single FETs, MOSFETs IRLZ24NLPBF-ND
N-Channel 55V 18A (Tc) 3.8W (Ta), 45W (Tc) Through Hole TO-262

N-Channel 55V 18A (Tc) 3.8W (Ta), 45W (Tc) Through Hole TO-262

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24NLPBF - 1047699-IRLZ24NLPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24NLPBF
1047699-IRLZ24NLPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24NLPBF 1047699-IRLZ24NLPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047699-IRLZ24NLPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 15nC @ 5V Max Input Capacitance: 480pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 60 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1047699-IRLZ24NLPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 15nC @ 5V
Max Input Capacitance: 480pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 60 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLZ24NLPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLZ24NLPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLZ24NLPBF
MOSFET N-CH 55V 18A TO262

MOSFET N-CH 55V 18A TO262

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRLZ24NLPBF-ND 1047699-IRLZ24NLPBF IRLZ24NLPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLZ24NLPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; TO-262 TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 55 volts
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