Infineon Technologies AG Single FETs, MOSFETs ISP25DP06LMXTSA1

Description
P-Channel 60V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4
Request a Quote Datasheet
Description
P-Channel 60V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 448-ISP25DP06LMXTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-ISP25DP06LMXTSA1TR-ND
Single FETs, MOSFETs 448-ISP25DP06LMXTSA1TR-ND
P-Channel 60V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4

P-Channel 60V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4

Buy Now Datasheet
Single FETs, MOSFETs - 448-ISP25DP06LMXTSA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-ISP25DP06LMXTSA1CT-ND
Single FETs, MOSFETs 448-ISP25DP06LMXTSA1CT-ND
P-Channel 60V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4

P-Channel 60V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4

Buy Now Datasheet
Single FETs, MOSFETs - 448-ISP25DP06LMXTSA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-ISP25DP06LMXTSA1DKR-ND
Single FETs, MOSFETs 448-ISP25DP06LMXTSA1DKR-ND
P-Channel 60V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4

P-Channel 60V 1.9A (Ta) 1.8W (Ta), 5W (Tc) Surface Mount PG-SOT223-4

Buy Now Datasheet
Singapore
60V 1.9A MOSFET Transistor
278-ISP25DP06LMXTSA1
60V 1.9A MOSFET Transistor 278-ISP25DP06LMXTSA1
MOSFET P-CH 60V 1.9A SOT223-4 Product overview: ISP25DP06LMXTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISP25DP06LMXTSA1 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 1.9A SOT223-4 Product overview: ISP25DP06LMXTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISP25DP06LMXTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1116878-ISP25DP06LMXTSA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1116878-ISP25DP06LMXTSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1116878-ISP25DP06LMXTSA1
Win Source Part Number: 1116878-ISP25DP06LMX TSA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id: 2V @ 270µA Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): ISP25DP06LM; ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: ISP25DP06LMXTSA1-ND, 448-ISP25DP06LMXTSA1 CT,SP004987270,2156- ISP25DP06LMXTSA1,448 -ISP25DP06LMXTSA1DKR ,448-ISP25DP06LMXTSA 1TR,INFINFISP25DP06L MXTSA1 Base Product Number: ISP25DP06 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1116878-ISP25DP06LMXTSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): ISP25DP06LM;
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: ISP25DP06LMXTSA1-ND,448-ISP25DP06LMXTSA1CT,SP004987270,2156-ISP25DP06LMXTSA1,448-ISP25DP06LMXTSA1DKR,448-ISP25DP06LMXTSA1TR,INFINFISP25DP06LMXTSA1
Base Product Number: ISP25DP06
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - ISP25DP06LMXTSA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ISP25DP06LMXTSA1
Single FETs, MOSFETs ISP25DP06LMXTSA1
MOSFET P-CH 60V 1.9A SOT223-4

MOSFET P-CH 60V 1.9A SOT223-4

Supplier's Site Datasheet
MOSFET SMALL SIGNAL MOSFETS

MOSFET SMALL SIGNAL MOSFETS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ISP25DP06LMXTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ISP25DP06LMXTSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ISP25DP06LMXTSA1
MOSFET P-CH 60V 1.9A SOT223-4

MOSFET P-CH 60V 1.9A SOT223-4

Supplier's Site
Mosfet, P-Ch, -60V, -1.9A, 150Deg C, 5W Rohs Compliant Infineon - 42AH1863 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -60V, -1.9A, 150Deg C, 5W Rohs Compliant Infineon
42AH1863
Mosfet, P-Ch, -60V, -1.9A, 150Deg C, 5W Rohs Compliant Infineon 42AH1863
MOSFET, P-CH, -60V, -1.9A, 150DEG C, 5W ROHS COMPLIANT: YES

MOSFET, P-CH, -60V, -1.9A, 150DEG C, 5W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 448-ISP25DP06LMXTSA1TR-ND 278-ISP25DP06LMXTSA1 1116878-ISP25DP06LMXTSA1 ISP25DP06LMXTSA1 ISP25DP06LMXTSA1 ISP25DP06LMXTSA1 42AH1863
Product Name Single FETs, MOSFETs 60V 1.9A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -60V, -1.9A, 150Deg C, 5W Rohs Compliant Infineon
Polarity P-Channel P-Channel P-Channel P-Channel; P-Channel
Package Type TO-261-4, TO-261AA Tape & Reel (TR) SOT3 TO-261-4, TO-261AA Surface Mount TO-3
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts
Transconductance 0.0044 kS
Unlock Full Specs
to access all available technical data