N-Channel 100V 11A (Ta), 58A (Tc) 2.1W (Ta), 60W (Tc) Surface Mount PG-TSDSON-8-26
N-Channel 100V 11A (Ta), 58A (Tc) 2.1W (Ta), 60W (Tc) Surface Mount PG-TSDSON-8-26
Win Source Part Number: 1278307-ISZ0804NLSAT
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™ 5
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-26
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-ISZ0804NLSATMA1D
Base Product Number: ISZ0804N
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 100V 11A/58A TSDSON Product overview: ISZ0804NLSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 11A, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 11A, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISZ0804NLSATMA1 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 11A/58A TSDSON
MOSFET N-CH 100V 11A/58A TSDSON
MOSFET, N-CH, 100V, 58A, TSDSON ROHS COMPLIANT: YES
| DigiKey | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 448-ISZ0804NLSATMA1TR-ND | 1278307-ISZ0804NLSATMA1 | 2326777 | 278-ISZ0804NLSATMA1 | ISZ0804NLSATMA1 | ISZ0804NLSATMA1 | 68AJ1759 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | 100V 11A 58A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 58A, Tsdson Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | 8-PowerTDFN | SOT3 | PQFN | Tape & Reel (TR) | 8-PowerTDFN | 8-PowerTDFN | TO-3 |
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 60 milliwatts | 2100 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |