The JANTXVR2N7426 is a radiation-hardened, P-channel power MOSFET in a TO-254AA package, designed for space applications. It features a drain-to-source breakdown voltage of -200V, a continuous drain current of -27A at 25°C, and a maximum on-state resistance of 160mΩ. The device is hermetically sealed with ceramic eyelets, has a typical weight of 9.3g, and meets MIL-PRF-19500 screening requirements for QPL status. It is qualified for 100 krad(Si) total ionizing dose with verified single event effect hardness, repetitive avalanche capability, and an ESD rating of Class 3A per MIL-STD-750, Method 1020. Thermal resistance from junction to case is 0.50°C/W.
Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL
Features
Potential Applications
Slash sheet
Similar Parts
IRHM9260
TO-254AA, 100 krad(Si) TID, COTS
JANTXVR2N7426
TO-254AA, 100 krad(Si) TID, QPL
JANSR2N7426
TO-254AA, 100 krad(Si) TID, QPL
JANTXVF2N7426
TO-254AA, 300 krad(Si) TID, QPL
JANSF2N7426
TO-254AA, 300 krad(Si) TID, QPL
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANTXVR2N7426 |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVR2N7426 |
| Polarity | P-Channel; P |