Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVF2N7389 JANTXVF2N7389

Description
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVF2N7389 - JANTXVF2N7389 - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

JANTXVF2N7389 is a radiation-hardened, P-channel power MOSFET for space applications, housed in a TO-205AF (TO-39) ceramic package weighing 0.98 g. It has a drain-to-source breakdown voltage of -100 V, a continuous drain current of -6.5 A at 25°C, and a static drain-to-source on-resistance of 0.30 Ω. The device is qualified to 300 kRads(Si) total ionizing dose with single event effect hardness, hermetically sealed, and meets MIL-PRF-19500/630 and MIL-STD-750 Class 1B ESD standards. Operating junction temperature ranges from -55°C to +150°C.

Datasheet Summary
Powered by GS/AI

JANTXVF2N7389 is a radiation-hardened, P-channel power MOSFET for space applications, housed in a TO-205AF (TO-39) ceramic package weighing 0.98 g. It has a drain-to-source breakdown voltage of -100 V, a continuous drain current of -6.5 A at 25°C, and a static drain-to-source on-resistance of 0.30 Ω. The device is qualified to 300 kRads(Si) total ionizing dose with single event effect hardness, hermetically sealed, and meets MIL-PRF-19500/630 and MIL-STD-750 Class 1B ESD standards. Operating junction temperature ranges from -55°C to +150°C.

Suppliers

Company
Product
Description
Supplier Links
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVF2N7389 - JANTXVF2N7389 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVF2N7389
JANTXVF2N7389
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVF2N7389 JANTXVF2N7389
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL

Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, QPL

Features

  • Single Event Effect (SEE) Hardened
  • Low RDS(on)
  • Proton tolerant
  • Low total gate charge
  • Simple Drive Requirements
  • Hermetically Sealed
  • Ceramic package
  • Light weight
  • ESD Rating: Class 1B per MIL-STD-750, Method 1020

Potential Applications

  • DC-DC converter
  • Motor drives
  • Inrush current protection
  • Solid state power controller
  • Thermal management
  • Active ORing circuits
  • Redundant power distribution
  • Load switch
  • Battery charging
  • Battery management system

Slash Sheet


Similar Parts

IRHF9130

TO-205AF, 100 krad(Si) TID, COTS

JANSR2N7389

TO-205AF, 100 krad(Si) TID, QPL

IRHF93130

TO-205AF, 300 krad(Si) TID, COTS

JANTXVF2N7389

TO-205AF, 300 krad(Si) TID, QPL

JANSF2N7389

TO-205AF, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number JANTXVF2N7389
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANTXVF2N7389
Polarity P-Channel; P
Unlock Full Specs
to access all available technical data