N-Channel 100V 22A (Ta), 150A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-7
N-Channel 100V 22A (Ta), 150A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-7
N-Channel 100V 22A (Ta), 150A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-7
MOSFET N-CH 100V 22A/150A TDSON Product overview: ISC0802NLSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 22A, 150A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 22A, 150A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISC0802NLSATMA1 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 22A/150A TDSON
MOSFET, N-CH, 100V, 150A, TDSON ROHS COMPLIANT: YES
MOSFET N-CH 100V 22A/150A TDSON
| RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2326756 | 448-ISC0802NLSATMA1DKR-ND | 278-ISC0802NLSATMA1 | ISC0802NLSATMA1 | 68AJ1741 | ISC0802NLSATMA1 |
| Product Name | MOSFETs | Single FETs, MOSFETs | 100V 22A 150A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 150A, Tdson Rohs Compliant Infineon | Single FETs, MOSFETs |
| Package Type | SO-8; SO-8 | 8-PowerTDFN | Tape & Reel (TR) | 5190 pF @ 50 V | TO-3 | 8-PowerTDFN |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| PD | 125 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
