MOSFET N-CH 100V 22A/150A TDSON Product overview: ISC0802NLSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 22A, 150A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 22A, 150A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ISC0802NLSATMA1 can be used for catalog matching and distributor lookup.
N-Channel 100V 22A (Ta), 150A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-7
N-Channel 100V 22A (Ta), 150A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-7
N-Channel 100V 22A (Ta), 150A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-7
MOSFET N-CH 100V 22A/150A TDSON
MOSFET N-CH 100V 22A/150A TDSON
MOSFET, N-CH, 100V, 150A, TDSON ROHS COMPLIANT: YES
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2326756 | 278-ISC0802NLSATMA1 | 448-ISC0802NLSATMA1DKR-ND | ISC0802NLSATMA1 | ISC0802NLSATMA1 | 68AJ1741 |
| Product Name | MOSFETs | 100V 22A 150A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 150A, Tdson Rohs Compliant Infineon |
| Package Type | SO-8; SO-8 | Tape & Reel (TR) | 8-PowerTDFN | 8-PowerTDFN | 5190 pF @ 50 V | TO-3 |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| PD | 125 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
