MOSFET P-CH 60V 330MA SOT23-3 Product overview: BSS83PH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 330MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 330MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSS83PH6327XTSA1
Manufacturer: Infineon Technologies
Win Source Part Number: 864766-BSS83PH6327XT
Series: SIPMOS®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 330mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
Package: TO-236-3, SC-59, SOT-23-3
Package: Reel - TR
Mounting: Surface Mount
Family Name: BSS83PH6327
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT23
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 33 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: BSS83P H6327CT, BSS83PH6327XTSA1DKR,
P-Channel 60V 330mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
P-Channel 60V 330mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
P-Channel 60V 330mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
P-channel enhancement mode Field-Effect Transistor
MOSFET P-CH 60V 330MA SOT23-3
MOSFET P-CH 60V 330MA SOT23-3
MOSFET, P-CH, -60V, -0.33A, 0.36W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:330mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Rochester Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSS83PH6327XTSA1 | 864766-BSS83PH6327XTSA1 | BSS83PH6327XTSA1CT-ND | BSS83PH6327XTSA1 | BSS83PH6327XTSA1 | BSS83PH6327XTSA1 | BSS83PH6327XTSA1 | 87X8605 |
| Product Name | 60V 330MA SOT23 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS83PH6327XTSA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -60V, -0.33A, 0.36W; Channel Type Infineon | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| Transconductance | 2.40E-4 kS | |||||||
| PD | 360 milliwatts | 360 milliwatts |
