Infineon Technologies AG 30V 40A MOSFET Transistor BSZ0901NS

Description
MOSFETs N-Ch 30V 40A TDSON-8 OptiMOS Product overview: BSZ0901NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSZ0901NS can be used for catalog matching and distributor lookup.
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Description
MOSFETs N-Ch 30V 40A TDSON-8 OptiMOS Product overview: BSZ0901NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSZ0901NS can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
30V 40A MOSFET Transistor
2088-BSZ0901NS
30V 40A MOSFET Transistor 2088-BSZ0901NS
MOSFETs N-Ch 30V 40A TDSON-8 OptiMOS Product overview: BSZ0901NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSZ0901NS can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 30V 40A TDSON-8 OptiMOS Product overview: BSZ0901NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSZ0901NS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ0901NS - 110891-BSZ0901NS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ0901NS
110891-BSZ0901NS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ0901NS 110891-BSZ0901NS
Manufacturer: Infineon Technologies Win Source Part Number: 110891-BSZ0901NS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TSDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 22A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2850pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 110891-BSZ0901NS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TSDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 22A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2850pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS

MOSFET N-Ch 30V 40A TDSON-8 OptiMOS

Buy Now Datasheet
Transistors - BSZ0901NS - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSZ0901NS
Transistors BSZ0901NS
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS

MOSFET N-Ch 30V 40A TDSON-8 OptiMOS

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 2088-BSZ0901NS 110891-BSZ0901NS BSZ0901NS BSZ0901NS
Product Name 30V 40A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ0901NS MOSFET Transistors
Polarity N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
Transconductance 0.0700 kS
PD 69 milliwatts 2100 to 50000 milliwatts
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