Infineon Technologies AG N-Channel Power MOSFET BSZ068N06NS

Description
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches Applications 48 V intermediate bus converter (IBC) EV charging Telecommunication infrastructure Designers who used this product also designed with 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs 1EDN7550B | Gate driver ICs IRS21271S | Gate driver ICs BSZ900N20NS3 G | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSC093N15NS5 | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET BSC010N04LSI | N-Channel Power MOSFET BSS123N | Small signal/small power MOSFET BSZ22DN20NS3 G | N-Channel Power MOSFET BAS70-04 | Schottky Diodes BSS131 | Small signal/small power MOSFET 2EDN7524G | Gate driver ICs 1ED44173N01B | Gate driver ICs IRS10752L | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs 1EDN7550B | Gate driver ICs IRS21271S | Gate driver ICs BSZ900N20NS3 G | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSC093N15NS5 | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET 1 2 3 4 5
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Description
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches Applications 48 V intermediate bus converter (IBC) EV charging Telecommunication infrastructure Designers who used this product also designed with 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs 1EDN7550B | Gate driver ICs IRS21271S | Gate driver ICs BSZ900N20NS3 G | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSC093N15NS5 | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET BSC010N04LSI | N-Channel Power MOSFET BSS123N | Small signal/small power MOSFET BSZ22DN20NS3 G | N-Channel Power MOSFET BAS70-04 | Schottky Diodes BSS131 | Small signal/small power MOSFET 2EDN7524G | Gate driver ICs 1ED44173N01B | Gate driver ICs IRS10752L | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs 1EDN7550B | Gate driver ICs IRS21271S | Gate driver ICs BSZ900N20NS3 G | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSC093N15NS5 | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSZ068N06NS - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSZ068N06NS
N-Channel Power MOSFET BSZ068N06NS
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches Applications 48 V intermediate bus converter (IBC) EV charging Telecommunication infrastructure Designers who used this product also designed with 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs 1EDN7550B | Gate driver ICs IRS21271S | Gate driver ICs BSZ900N20NS3 G | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSC093N15NS5 | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET BSC010N04LSI | N-Channel Power MOSFET BSS123N | Small signal/small power MOSFET BSZ22DN20NS3 G | N-Channel Power MOSFET BAS70-04 | Schottky Diodes BSS131 | Small signal/small power MOSFET 2EDN7524G | Gate driver ICs 1ED44173N01B | Gate driver ICs IRS10752L | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs 1EDN7550B | Gate driver ICs IRS21271S | Gate driver ICs BSZ900N20NS3 G | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSC093N15NS5 | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET 1 2 3 4 5

OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.


Summary of Features

  • Optimized for synchronous rectification
  • 40% lower R DS(on) than alternative devices
  • 40% improvement of FOM over similar devices
  • RoHS compliant - halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Potential Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control for 12-48V systems
  • Or-ing switches

Applications

  • 48 V intermediate bus converter (IBC)
  • EV charging
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 2EDN7534B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • 1EDN7550B |
    Gate driver ICs
  • IRS21271S |
    Gate driver ICs
  • BSZ900N20NS3 G |
    N-Channel Power MOSFET
  • IR38063M |
    Integrated POL Voltage Regulators
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSC035N10NS5 |
    N-Channel Power MOSFET
  • BSC010N04LSI |
    N-Channel Power MOSFET
  • BSS123N |
    Small signal/small power MOSFET
  • BSZ22DN20NS3 G |
    N-Channel Power MOSFET
  • BAS70-04 |
    Schottky Diodes
  • BSS131 |
    Small signal/small power MOSFET
  • 2EDN7524G |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • IRS10752L |
    Gate driver ICs
  • 1EDI60N12AF |
    Gate driver ICs
  • 2EDN7534B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • 1EDN7550B |
    Gate driver ICs
  • IRS21271S |
    Gate driver ICs
  • BSZ900N20NS3 G |
    N-Channel Power MOSFET
  • IR38063M |
    Integrated POL Voltage Regulators
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSC035N10NS5 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
Sheung Wan, Hong Kong
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MOSFET DIFFERENTIATED MOSFETS

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Technical Specifications

  Infineon Technologies AG VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSZ068N06NS BSZ068N06NS
Product Name N-Channel Power MOSFET MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0068 ohms
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