P-channel MOSFET with a drain-source voltage of -30 V and a continuous drain current of -2.0 A at 25 °C, designed for logic-level gate drive at 4.5 V. It features an on-state resistance of 80 mΩ at -10 V gate-source voltage and is packaged in a PG-SOT-23 case. The device is ESD protected, qualified to AEC-Q101, RoHS compliant, and halogen-free per IEC61249-2-21. Operating and storage temperature range is -55 °C to 150 °C.
MOSFET P-Ch -30V -2A SOT-23-3
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS308PEH6327XT |
| Product Name | MOSFET |
