The BSS138I is an N-channel enhancement mode MOSFET designed for low-power switching in industrial applications, housed in a PG-SOT23-3 package measuring 2.80-3.04 mm in length, 2.40-2.64 mm in width, and 0.89-1.12 mm in height. It has a drain-source breakdown voltage of 60 V, a maximum on-state resistance of 3.5 Ω at 10 V gate-source voltage, and a continuous drain current of 0.23 A at 25 °C. The device is RoHS compliant, halogen-free per IEC 61249-2-21, and qualified for industrial use according to JEDEC JESD47, JESD22, and J-STD-020 standards. Thermal resistance junction-to-ambient is 350 K/W on a minimal footprint. ESD sensitivity is classified as Class 0 (<250 V HBM).
N-channel enhancement mode small signal transistor for industrial and consumer applications in SOT-23-3 package
The N-channel enhancement mode MOSFET BSS138I in SOT-23-3 package features VDS 60 V and RDS(on),max
3.5 Ohm.
With an optimal price/performance ratio and small footprint packages, Infineon's small signal and small power MOSFETs are the best fit for a wide range of applications and circuits. These include low voltage drives, linear battery charger, battery protection, load switches, DC-DC converters, reverse polarity protection and many more.
Small signal/small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. Enhancement and depletion-mode options, as well as Industry qualification make Infineon's portfolio the best fit for industry and consumer markets.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BSS138I |
| Product Name | Small Signal/Small Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 3.5 ohms |
