P-channel enhancement mode MOSFET with a drain-source voltage of -60 V, continuous drain current of -0.62 A at 25 °C, and on-state resistance of 620 mΩ to 1300 mΩ. Packaged in SC-59, it is avalanche rated, logic level gated, RoHS compliant, halogen-free per IEC 61249-2-21, and qualified to AEC-Q101. Thermal resistance is 250 K/W. Operating and storage temperature range is -55 °C to 150 °C.
P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SC-59
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1154888-BSR315P
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
| Infineon Technologies AG | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | RF Transistors |
| Product Number | BSR315P | 1154888-BSR315P |
| Product Name | Small Signal/Small Power MOSFET | END - OF - LIFE - BSR315P |
| Polarity | P-Channel; P | |
| Transistor Technology / Material | Si/SiC | |
| Operating Mode | Enhancement | |
| rDS(on) | 0.8000 ohms |
