Infineon Technologies AG Single FETs, MOSFETs BSS138N-E6327

Description
N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
Request a Quote Datasheet
Description
N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - BSS138NEINTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSS138NEINTR-ND
Single FETs, MOSFETs BSS138NEINTR-ND
N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount PG-SOT23

N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount PG-SOT23

Buy Now Datasheet
Singapore, Singapore
60V 230MA SOT23 MOSFET Transistor
278-BSS138N-E6327
60V 230MA SOT23 MOSFET Transistor 278-BSS138N-E6327
MOSFET N-CH 60V 230MA SOT23-3 Product overview: BSS138N-E6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 230MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 230MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSS138N-E6327 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 230MA SOT23-3 Product overview: BSS138N-E6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 230MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 230MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSS138N-E6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138N-E6327 - 097784-BSS138N-E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138N-E6327
097784-BSS138N-E6327
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138N-E6327 097784-BSS138N-E6327
Manufacturer: Infineon Technologies Win Source Part Number: 097784-BSS138N-E6327 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 230mA (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 1.4nC @ 10V Max Input Capacitance: 41pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 230mA, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 097784-BSS138N-E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 230mA (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 1.4nC @ 10V
Max Input Capacitance: 41pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 230mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSS138N-E6327 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSS138N-E6327
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSS138N-E6327
MOSFET N-CH 60V 230MA SOT23-3

MOSFET N-CH 60V 230MA SOT23-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSS138NEINTR-ND 278-BSS138N-E6327 097784-BSS138N-E6327 BSS138N-E6327
Product Name Single FETs, MOSFETs 60V 230MA SOT23 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS138N-E6327 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) SOT3; SOT23; PG-SOT23-3 1.4 nC @ 10 V
Transistor Grade / Operating Range Automotive
PD 360 milliwatts 360 milliwatts
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