MOSFET P-CH 250V 260MA SOT223-4 Product overview: BSP92PH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 260MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 260MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSP92PH6327XTSA1
P-Channel 250V 260mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
P-Channel 250V 260mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
P-Channel 250V 260mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Manufacturer: Infineon Technologies
Win Source Part Number: 108010-BSP92PH6327XT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 260mA (Ta)
Gate-Source Threshold Voltage: 2V @ 130μA
Max Gate Charge: 5.4nC @ 10V
Max Input Capacitance: 104pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 260mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
MOSFET P-CH 250V 260MA SOT223-4
MOSFET, P-CH, -250V, -0.26A, SOT-223-4; Transistor Polarity:P Channel; Continuous Drain Current Id:-260mA; Drain Source Voltage Vds:-250V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; RoHS Compliant: Yes
MOSFET P-Ch -250V -260mA SOT-223-4
MOSFET P-CH 250V 260MA SOT223-4
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-BSP92PH6327XTSA1 | BSP92PH6327XTSA1TR-ND | 108010-BSP92PH6327XTSA1 | BSP92PH6327XTSA1 | 97Y1264 | BSP92PH6327XTSA1 | BSP92PH6327XTSA1 |
| Product Name | 250V 260MA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP92PH6327XTSA1 | Single FETs, MOSFETs | Mosfet, P-Ch, -250V, -0.26A, Sot-223-4; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 250 volts | 250 volts | 250 volts | ||||
| Transconductance | 2.90E-4 kS | ||||||
| PD | 1.8 milliwatts | 1800 milliwatts | 1800 milliwatts |
