BSS7728N is an N-channel enhancement mode MOSFET for small-signal applications, packaged in PG-SOT-23 with a continuous drain current of 0.2 A at 25°C and 0.16 A at 70°C. It has a drain-source breakdown voltage of 60 V, a maximum on-state resistance of 7.5 Ω at 4.5 V gate voltage, and a gate-source voltage rating of ±20 V. The device is qualified to AEC-Q101, halogen-free per IEC61249-2-21, and supports a reverse diode dv/dt of 6 kV/μs. Operating and storage junction temperature ranges from -55°C to +150°C.
SMALL SIGNAL N-CHANNEL MOSFET
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS7728NH6327 |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
| V(BR)DSS | 60 volts |
| IDSS | 200 milliamps |
