Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS119L6327 BSS119L6327

Manufacturer: Infineon Technologies
Win Source Part Number: 201421-BSS119L6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 170mA (Ta)
Gate-Source Threshold Voltage: 2.3V @ 50μA
Max Gate Charge: 2.5nC @ 10V
Max Input Capacitance: 78pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 Ohm @ 170mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Motor Drive & Control, Power Management

MOSFET N-CH 100V 170MA SOT-23 Product overview: BSS119L6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 170MA, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 170MA, SOT-23, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSS119L6327 can be used for catalog matching and distributor lookup.