Win Source Part Number: 1192331-BSZ084N08NS5
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Power Dissipation (Max): 63W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSZ084N08NS5; SP001227056;
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: BSZ084N08NS5ATMA1-ND
Base Product Number: BSZ084
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 80V 40A TSDSON Product overview: BSZ084N08NS5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSZ084N08NS5ATMA
INFINEON MOSFET BSZ084N08NS5ATMA1
N-Channel 80V 40A (Tc) 63W (Tc) Surface Mount PG-TSDSON-8-FL
N-Channel 80V 40A (Tc) 63W (Tc) Surface Mount PG-TSDSON-8-FL
N-Channel 80V 40A (Tc) 63W (Tc) Surface Mount PG-TSDSON-8-FL
MOSFET, N-CH, 80V, 40A, TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:-RoHS Compliant: Yes
MOSFET N-CH 80V 40A TSDSON
MOSFET N-Ch 80V 40A TSDSON-8
MOSFET N-CH 80V 40A TSDSON
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1192331-BSZ084N08NS5ATMA1 | 278-BSZ084N08NS5ATMA1 | 2580715 | 448-BSZ084N08NS5ATMA1TR-ND | 49AC0113 | BSZ084N08NS5ATMA1 | BSZ084N08NS5ATMA1 | BSZ084N08NS5ATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 80V 40A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 80V, 40A, Tsdson; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 63000 milliwatts | 63 milliwatts | 63000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | Tape & Reel (TR) | TSDSON | 8-PowerTDFN | TO-3 | 8-PowerTDFN | 8-PowerTDFN | |
| MOSFET Operating Mode | Enhancement |
