Manufacturer: Infineon Technologies
Win Source Part Number: 109655-BSZ0909NSATMA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TSDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 34V
Continuous Drain Current at 25°C: 9A (Ta), 36A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 1310pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): BSZ0909NS; BSZ0909NSXT;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
N-Channel 34V 9A (Ta), 36A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8
N-Channel 34V 9A (Ta), 36A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8
N-Channel 34V 9A (Ta), 36A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8
MOSFET N-CH 34V 9A/36A 8TSDSON Product overview: BSZ0909NSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 34V, 9A, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 34V, 9A, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSZ0909NSATMA1 can be used for catalog matching and distributor lookup.
Single N-Channel 34 V 12 mOhm 13 nC OptiMOS? Power Mosfet - TSDSON-8
MOSFET N-CH 34V 9A/36A 8TSDSON
MOSFET, N-CH, 34V, 36A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:34V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 109655-BSZ0909NSATMA1 | BSZ0909NSATMA1CT-ND | 278-BSZ0909NSATMA1 | 376-BSZ0909NSATMA1 | BSZ0909NSATMA1 | 12AC9457 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ0909NSATMA1 | Single FETs, MOSFETs | 34V 9A 36A MOSFET Transistor | Single N-Channel 34 V 12 mOhm 13 nC OptiMOS? Power Mosfet - TSDSON-8 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 34V, 36A, Tsdson; Transistor Polarity Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 34 volts | 34 volts | 34 volts | |||
| PD | 2100 to 25000 milliwatts | 2100 milliwatts | 2100 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; PG-TSDSON-8 | 8-PowerTDFN | Tape & Reel (TR) | 8-PowerTDFN | TO-3 |
