Infineon Technologies AG Discrete Semiconductor Products BSS127 H6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 127742-BSS127 H6327 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: SIPMOS? Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-236-3, SC-59, SOT-23-3 Manufacturer Device Package: PG-SOT23-3 FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 8μA Gate Charge (Qg) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) @ Vds: 28pF @ 25V Power - Max: 500mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 127742-BSS127 H6327 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: SIPMOS? Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-236-3, SC-59, SOT-23-3 Manufacturer Device Package: PG-SOT23-3 FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 8μA Gate Charge (Qg) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) @ Vds: 28pF @ 25V Power - Max: 500mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - 127742-BSS127 H6327 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
127742-BSS127 H6327
Discrete Semiconductor Products 127742-BSS127 H6327
Manufacturer: Infineon Technologies Win Source Part Number: 127742-BSS127 H6327 Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Series: SIPMOS? Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-236-3, SC-59, SOT-23-3 Manufacturer Device Package: PG-SOT23-3 FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 8μA Gate Charge (Qg) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) @ Vds: 28pF @ 25V Power - Max: 500mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial

Manufacturer: Infineon Technologies
Win Source Part Number: 127742-BSS127 H6327
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: SIPMOS?
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-236-3, SC-59, SOT-23-3
Manufacturer Device Package: PG-SOT23-3
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 8μA
Gate Charge (Qg) @ Vgs: 1nC @ 10V
Input Capacitance (Ciss) @ Vds: 28pF @ 25V
Power - Max: 500mW
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Singapore, Singapore
Automotive 600V 0.021A SOT-23 MOSFET Transistor
278-BSS127 H6327
Automotive 600V 0.021A SOT-23 MOSFET Transistor 278-BSS127 H6327
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101 Product overview: BSS127 H6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 600V, 0.021A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 600V, 0.021A, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSS127 H6327 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101 Product overview: BSS127 H6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 600V, 0.021A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 600V, 0.021A, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSS127 H6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 21mA SOT-23-3

MOSFET N-Ch 600V 21mA SOT-23-3

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 127742-BSS127 H6327 278-BSS127 H6327 BSS127 H6327
Product Name Discrete Semiconductor Products Automotive 600V 0.021A SOT-23 MOSFET Transistor MOSFET
Polarity N-Channel N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SOT3; SOT23 Tape and Reel
Packing Method Tape Reel; Reel(TR) Tape and Reel
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