The BSS139I is an N-channel depletion mode MOSFET in a PG-SOT23-3 package measuring 2.80 to 3.04 mm in length and 2.40 to 2.64 mm in width, designed for industrial applications. It has a drain-source breakdown voltage of 250 V, a maximum on-state resistance of 30 Ω, and a continuous drain current of 0.08 A at 70 °C. The device operates from -55 °C to 150 °C and has a junction-to-ambient thermal resistance of 350 K/W. It is RoHS compliant, halogen-free according to IEC 61249-2-21, and qualified for industrial use per JEDEC JESD47, JESD22, and J-STD-020 standards.
N-channel depletion mode small signal transistor for industrial and consumer applications in SOT-23-3 package
The N-channel depletion mode MOSFET BSS139I in SOT-23-3 package features VDS 250 V and RDS(on),max of
30 Ohm.
With an optimal price/performance ratio and small footprint packages Infineon's small signal and small power MOSFETs are the best fit for a wide range of applications and circuits. These include low voltage drives, linear battery charger, battery protection, load switches, DC-DC converters, reverse polarity protection and many more.
Small signal/small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. Enhancement and depletion-mode options, as well as Industry qualification make Infineon's portfolio the best fit for industry and consumer markets.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS139I |
| Product Name | N-Channel Depletion Mode MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| MOSFET Operating Mode | Depletion |
| VGS(off) | -2.1 to -1 volts |