The BSS169 is an N-channel depletion mode MOSFET designed for small-signal switching applications. It is housed in a PG-SOT-23 package and features a drain-source breakdown voltage of 100 V, a maximum continuous drain current of 0.17 A at 25 °C, and an on-state resistance of up to 12 Ω. The device supports a gate-source voltage of ±20 V and is rated for operation from -55 °C to 150 °C. It complies with RoHS and is Pb-free. The part is available in V_GS(th) sorted bands on tape and reel, with 3000 pieces per reel.
SMALL SIGNAL N-CHANNEL MOSFET
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS169L6327 |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
| V(BR)DSS | 100 volts |
| IDSS | 170 milliamps |
