Infineon Technologies AG MOSFETs BSZ100N06LS3 G

MOSFET N-Channel 60V 11A TSDSON8

MOSFET N-Channel 60V 11A TSDSON8

MOSFET N-Channel 60V 11A TSDSON8

MOSFETs N-Ch 60V 20A TSDSON-8 OptiMOS 3 Product overview: BSZ100N06LS3 G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSZ100N06LS3 G can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 770442-BSZ100N06LS3 G
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerVDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PG-TSDSON-8
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.2V @ 23μA
Gate Charge (Qg) (Maximum) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3500pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.1W (Ta), 50W (Tc)
Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited