Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS127 L6327 BSS127 L6327

Manufacturer: Infineon Technologies
Win Source Part Number: 039690-BSS127 L6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21mA (Ta)
Gate-Source Threshold Voltage: 2.6V @ 8μA
Max Gate Charge: 1nC @ 10V
Max Input Capacitance: 28pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 Ohm @ 16mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

MOSFET N-CH 600V 0.021A SOT-23 Product overview: BSS127 L6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 0.021A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 0.021A, SOT-23, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSS127 L6327 can be used for catalog matching and distributor lookup.