MOSFET P-CH 20V 630MA SOT323-3 Product overview: BSS209PWH6327XTSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 630MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 630MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSS209PWH6327XTS
Manufacturer: Infineon Technologies
Win Source Part Number: 101929-BSS209PWH6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 300mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT323-3
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 630mA (Tc)
Gate-Source Threshold Voltage: 1.2V @ 3.5μA
Max Gate Charge: 1.3nC @ 4.5V
Max Input Capacitance: 115pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 550 mOhm @ 630mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET P-CH 20V 630MA SOT323-3
P-Channel 20V 630mA (Tc) 300mW (Ta) Surface Mount PG-SOT323
P-Channel 20V 630mA (Tc) 300mW (Ta) Surface Mount PG-SOT323
P-Channel 20V 630mA (Tc) 300mW (Ta) Surface Mount PG-SOT323
MOSFET P-CH 20V 630MA SOT323-3
MOSFET P-Ch -20V -630mA SOT-323-3
MOSFET, P-CH, -20V, -0.63A, SOT-323-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-630mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.379ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:-900mV; RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSS209PWH6327XTSA1 | 101929-BSS209PWH6327XTSA1 | BSS209PWH6327XTSA1 | BSS209PWH6327XTSA1DKR-ND | 2500554 | BSS209PWH6327XTSA1 | BSS209PWH6327XTSA1 | 68AC4429 |
| Product Name | 20V 630MA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS209PWH6327XTSA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -20V, -0.63A, Sot-323-3; Transistor Polarity Infineon |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| Transconductance | 8.70E-4 kS | |||||||
| PD | 300 milliwatts | 300 milliwatts | 300 milliwatts |
