Infineon Technologies AG 60V 40A MOSFET Transistor BSZ0703LSATMA1

MOSFET N-CH 60V 40A TSDSON Product overview: BSZ0703LSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSZ0703LSATMA1 can be used for catalog matching and distributor lookup.

N-Channel 60V 40A (Tc) 46W (Tc) Surface Mount PG-TSDSON-8-26

Win Source Part Number: 962350-BSZ0703LSATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Power Dissipation (Max): 46W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-26
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001614096,448-BSZ0703LSATMA1TR,448-BSZ0703LSATMA1DKR,448-BSZ0703LSATMA1CT,BSZ0703LSATMA1-ND
Base Product Number: BSZ0703
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V