Infineon Technologies AG N-Channel Power MOSFET BSZ031NE2LS5

Description
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features Best-in-class on-state resistance Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd) RoHS compliant and halogen free Optimized EMI behavior (integrated damping network) Benefits Highest efficiency Highest power density with S3O8 or Power Block package Reduction of overall system costs Operation at high-switching frequency Potential Applications Desktop and server Single-phase and multiphase POL CPU/GPU VR in notebooks High power density voltage regulator Or-ing E-fuse Applications Smart inhaler system Solutions for inductive wireless charging above 50 W
  • N-Channel Power MOSFET - BSZ031NE2LS5 - Infineon Technologies AG
    Infineon Technologies AG
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Description
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features Best-in-class on-state resistance Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd) RoHS compliant and halogen free Optimized EMI behavior (integrated damping network) Benefits Highest efficiency Highest power density with S3O8 or Power Block package Reduction of overall system costs Operation at high-switching frequency Potential Applications Desktop and server Single-phase and multiphase POL CPU/GPU VR in notebooks High power density voltage regulator Or-ing E-fuse Applications Smart inhaler system Solutions for inductive wireless charging above 50 W
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Datasheet
Datasheet Summary
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BSZ031NE2LS5 is an N-channel MOSFET designed for high-performance buck converters, featuring a max drain-source voltage of 25 V, a maximum on-resistance of 3.1 mΩ at VGS = 4.5 V, and a continuous drain current of 80 A. It is packaged in a PG-TSDSON-8 FL case. The device is 100% avalanche tested, has a gate charge of 6.3 nC from 0 V to 4.5 V, and meets JEDEC standards for target applications. It is RoHS compliant and halogen-free according to IEC61249-2-21.

Datasheet Summary
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BSZ031NE2LS5 is an N-channel MOSFET designed for high-performance buck converters, featuring a max drain-source voltage of 25 V, a maximum on-resistance of 3.1 mΩ at VGS = 4.5 V, and a continuous drain current of 80 A. It is packaged in a PG-TSDSON-8 FL case. The device is 100% avalanche tested, has a gate charge of 6.3 nC from 0 V to 4.5 V, and meets JEDEC standards for target applications. It is RoHS compliant and halogen-free according to IEC61249-2-21.

Suppliers

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N-Channel Power MOSFET - BSZ031NE2LS5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSZ031NE2LS5
N-Channel Power MOSFET BSZ031NE2LS5
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features Best-in-class on-state resistance Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd) RoHS compliant and halogen free Optimized EMI behavior (integrated damping network) Benefits Highest efficiency Highest power density with S3O8 or Power Block package Reduction of overall system costs Operation at high-switching frequency Potential Applications Desktop and server Single-phase and multiphase POL CPU/GPU VR in notebooks High power density voltage regulator Or-ing E-fuse Applications Smart inhaler system Solutions for inductive wireless charging above 50 W

With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.


Summary of Features

  • Best-in-class on-state resistance
  • Benchmark switching performance (lowest figure of merits R on x Q g and
    R on x Q gd)
  • RoHS compliant and halogen free
  • Optimized EMI behavior (integrated
    damping network)

Benefits

  • Highest efficiency
  • Highest power density with S3O8 or Power Block package
  • Reduction of overall system costs
  • Operation at high-switching frequency

Potential Applications

  • Desktop and server
  • Single-phase and multiphase POL
  • CPU/GPU VR in notebooks
  • High power density voltage regulator
  • Or-ing
  • E-fuse

Applications

  • Smart inhaler system
  • Solutions for inductive wireless charging above 50 W
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSZ031NE2LS5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0031 ohms
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