Infineon Technologies AG Small Signal/Small Power MOSFET BSS214N

Description
N-Channel Small Signal MOSFET 20 V in SOT23 package Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control. Summary of Features Enhancement mode Super logic level Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, halogen-free Qualified according to automotive standards PPAP capable Benefits Low RDS(on) provides higher efficiency and extends battery life Small packages save PCB space Best-in-class quality and reliability Potential Applications Automotive Lighting Battery management Load switch DC-DC eMobility Motor control Onboard charger Telecom Applications 48 V intermediate bus converter (IBC) Automotive instrument cluster EV traction inverter Designers who used this product also designed with IPW60R037CM8 | 600 V CoolMOS™ 8 BSC014N04LSI | N-Channel Power MOSFET 1EDN8550B | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages TDA21535 | Integrated Smart Power Stages BSS215P | Small signal/small power MOSFET IPB017N10N5LF | N-Channel Power MOSFET IPD80R2K7C3A | Automotive MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSC032N04LS | N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC014N04LSI | N-Channel Power MOSFET 1EDN8550B | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages TDA21535 | Integrated Smart Power Stages BSS215P | Small signal/small power MOSFET 1 2 3
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Description
N-Channel Small Signal MOSFET 20 V in SOT23 package Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control. Summary of Features Enhancement mode Super logic level Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, halogen-free Qualified according to automotive standards PPAP capable Benefits Low RDS(on) provides higher efficiency and extends battery life Small packages save PCB space Best-in-class quality and reliability Potential Applications Automotive Lighting Battery management Load switch DC-DC eMobility Motor control Onboard charger Telecom Applications 48 V intermediate bus converter (IBC) Automotive instrument cluster EV traction inverter Designers who used this product also designed with IPW60R037CM8 | 600 V CoolMOS™ 8 BSC014N04LSI | N-Channel Power MOSFET 1EDN8550B | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages TDA21535 | Integrated Smart Power Stages BSS215P | Small signal/small power MOSFET IPB017N10N5LF | N-Channel Power MOSFET IPD80R2K7C3A | Automotive MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSC032N04LS | N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC014N04LSI | N-Channel Power MOSFET 1EDN8550B | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages TDA21535 | Integrated Smart Power Stages BSS215P | Small signal/small power MOSFET 1 2 3
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Suppliers

Company
Product
Description
Supplier Links
Small Signal/Small Power MOSFET - BSS214N - Infineon Technologies AG
Neubiberg, Germany
Small Signal/Small Power MOSFET
BSS214N
Small Signal/Small Power MOSFET BSS214N
N-Channel Small Signal MOSFET 20 V in SOT23 package Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control. Summary of Features Enhancement mode Super logic level Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, halogen-free Qualified according to automotive standards PPAP capable Benefits Low RDS(on) provides higher efficiency and extends battery life Small packages save PCB space Best-in-class quality and reliability Potential Applications Automotive Lighting Battery management Load switch DC-DC eMobility Motor control Onboard charger Telecom Applications 48 V intermediate bus converter (IBC) Automotive instrument cluster EV traction inverter Designers who used this product also designed with IPW60R037CM8 | 600 V CoolMOS™ 8 BSC014N04LSI | N-Channel Power MOSFET 1EDN8550B | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages TDA21535 | Integrated Smart Power Stages BSS215P | Small signal/small power MOSFET IPB017N10N5LF | N-Channel Power MOSFET IPD80R2K7C3A | Automotive MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSC032N04LS | N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC014N04LSI | N-Channel Power MOSFET 1EDN8550B | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21570 | Integrated Smart Power Stages TDA21520 | Integrated Smart Power Stages TDA21535 | Integrated Smart Power Stages BSS215P | Small signal/small power MOSFET 1 2 3

N-Channel Small Signal MOSFET 20 V in SOT23 package

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.


Summary of Features

  • Enhancement mode
  • Super logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable

Benefits

  • Low RDS(on) provides higher efficiency and extends battery life
  • Small packages save PCB space
  • Best-in-class quality and reliability

Potential Applications

  • Automotive
  • Lighting
  • Battery management
  • Load switch
  • DC-DC
  • eMobility
  • Motor control
  • Onboard charger
  • Telecom

Applications

  • 48 V intermediate bus converter (IBC)
  • Automotive instrument cluster
  • EV traction inverter

Designers who used this product also designed with


  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • BSC014N04LSI |
    N-Channel Power MOSFET
  • 1EDN8550B |
    Gate driver ICs
  • OPTIGA TPM SLB 9672 FW15
    OPTIGA™ TPM - Trusted Platform Module
  • TDA21570 |
    Integrated Smart Power Stages
  • TDA21520 |
    Integrated Smart Power Stages
  • TDA21535 |
    Integrated Smart Power Stages
  • BSS215P |
    Small signal/small power MOSFET
  • IPB017N10N5LF |
    N-Channel Power MOSFET
  • IPD80R2K7C3A |
    Automotive MOSFET
  • ICE3PCS01G |
    PFC-CCM (continuous conduction mode) ICs
  • BSC032N04LS |
    N-Channel Power MOSFET
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • BSC014N04LSI |
    N-Channel Power MOSFET
  • 1EDN8550B |
    Gate driver ICs
  • OPTIGA TPM SLB 9672 FW15
    OPTIGA™ TPM - Trusted Platform Module
  • TDA21570 |
    Integrated Smart Power Stages
  • TDA21520 |
    Integrated Smart Power Stages
  • TDA21535 |
    Integrated Smart Power Stages
  • BSS215P |
    Small signal/small power MOSFET

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Supplier's Site Datasheet
Singapore
20V 1.5A MOSFET Transistor
285-BSS214N
20V 1.5A MOSFET Transistor 285-BSS214N
MOSFET N-CH 20V 1.5A SOT323 Product overview: BSS214N from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSS214N can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 1.5A SOT323 Product overview: BSS214N from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSS214N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS214N - 83401-BSS214N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS214N
83401-BSS214N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS214N 83401-BSS214N
Manufacturer: Infineon Technologies Win Source Part Number: 83401-BSS214N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT323-3 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 1.2V @ 3.7μA Max Gate Charge: 0.8nC @ 5V Max Input Capacitance: 143pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 140 mOhm @ 1.5A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 83401-BSS214N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT323-3
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 3.7μA
Max Gate Charge: 0.8nC @ 5V
Max Input Capacitance: 143pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 140 mOhm @ 1.5A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSS214N 285-BSS214N 83401-BSS214N
Product Name Small Signal/Small Power MOSFET 20V 1.5A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS214N
Polarity N-Channel; N N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.2500 ohms
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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