OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance
The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits.
Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Summary of Features
Compared to alternative products:
RDS(on) reduced by 30%
Improved FOM Qg x RDS(on) by 29%
Improved FOM Qgd x RDS(on) by 46%
Optimized for synchronous rectification
Suited for ORing circuits
RoHS compliant - halogen free
MSL1 rated
Benefits
Highest system efficiency
Less paralleling required
Increased power density
Very low voltage overshoot
Reduced need for snubber circuit
System cost reduction
Potential Applications
Wireless charging
Multicopter
Telecom
Charger
Server
Drives
SMPS
Applications
48 V intermediate bus converter (IBC)
Adapters and chargers
Telecommunication infrastructure
Designers who used this product also designed with
BSS169 | N-Channel Depletion Mode MOSFET
ISC027N10NM6 | N-Channel Power MOSFET
BSS169 | N-Channel Depletion Mode MOSFET
ISC027N10NM6 | N-Channel Power MOSFET
BSS169 | N-Channel Depletion Mode MOSFET
ISC027N10NM6 | N-Channel Power MOSFET
OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance
The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits.
Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Summary of Features
- Compared to alternative products:
- Improved FOM Qg x RDS(on) by 29%
- Improved FOM Qgd x RDS(on) by 46%
- Optimized for synchronous rectification
- Suited for ORing circuits
- RoHS compliant - halogen free
- MSL1 rated
Benefits
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- Reduced need for snubber circuit
- System cost reduction
Potential Applications
- Wireless charging
- Multicopter
- Telecom
- Charger
- Server
- Drives
- SMPS
Applications
- 48 V intermediate bus converter (IBC)
- Adapters and chargers
- Telecommunication infrastructure
Designers who used this product also designed with
- BSS169 |
N-Channel Depletion Mode MOSFET
- ISC027N10NM6 |
N-Channel Power MOSFET
- BSS169 |
N-Channel Depletion Mode MOSFET
- ISC027N10NM6 |
N-Channel Power MOSFET
- BSS169 |
N-Channel Depletion Mode MOSFET
- ISC027N10NM6 |
N-Channel Power MOSFET