The BSZ018N04LS6 is an N-channel power MOSFET optimized for synchronous rectification, rated for 40 V drain-source voltage and 175 °C junction temperature. It features a maximum on-resistance of 1.8 mΩ at 10 V gate voltage and 25 °C, with a continuous drain current of 158 A. The device is packaged in a PG-TSDSON-8 FL case measuring 3.20 to 3.40 mm by 3.20 to 3.40 mm, with a 0.65 mm pitch. It is RoHS compliant and halogen-free per IEC61249-2-21. The part is fully qualified according to JEDEC for industrial applications and is 100% avalanche tested. Thermal resistance from junction to case is 1.8 °C/W.
OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance
The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits.
Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Summary of Features
Benefits
Potential Applications
Applications
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| Infineon Technologies AG | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Transistors |
| Product Number | BSZ018N04LS6 | BSZ018N04LS6 | 376-BSZ018N04LS6 |
| Product Name | N-Channel Power MOSFET | Transistors | PG-TSDSON-8 Pre-ordered transistors RoHS |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 0.0018 ohms |
