Infineon Technologies AG N-Channel Power MOSFET BSZ018N04LS6

Description
OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction. Summary of Features Compared to alternative products: RDS(on) reduced by 30% Improved FOM Qg x RDS(on) by 29% Improved FOM Qgd x RDS(on) by 46% Optimized for synchronous rectification Suited for ORing circuits RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density Very low voltage overshoot Reduced need for snubber circuit System cost reduction Potential Applications Wireless charging Multicopter Telecom Charger Server Drives SMPS Applications 48 V intermediate bus converter (IBC) Adapters and chargers Telecommunication infrastructure Designers who used this product also designed with BSS169 | N-Channel Depletion Mode MOSFET ISC027N10NM6 | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET ISC027N10NM6 | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET ISC027N10NM6 | N-Channel Power MOSFET
Request a Quote Datasheet
Description
OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction. Summary of Features Compared to alternative products: RDS(on) reduced by 30% Improved FOM Qg x RDS(on) by 29% Improved FOM Qgd x RDS(on) by 46% Optimized for synchronous rectification Suited for ORing circuits RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density Very low voltage overshoot Reduced need for snubber circuit System cost reduction Potential Applications Wireless charging Multicopter Telecom Charger Server Drives SMPS Applications 48 V intermediate bus converter (IBC) Adapters and chargers Telecommunication infrastructure Designers who used this product also designed with BSS169 | N-Channel Depletion Mode MOSFET ISC027N10NM6 | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET ISC027N10NM6 | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET ISC027N10NM6 | N-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSZ018N04LS6 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSZ018N04LS6
N-Channel Power MOSFET BSZ018N04LS6
OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction. Summary of Features Compared to alternative products: RDS(on) reduced by 30% Improved FOM Qg x RDS(on) by 29% Improved FOM Qgd x RDS(on) by 46% Optimized for synchronous rectification Suited for ORing circuits RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density Very low voltage overshoot Reduced need for snubber circuit System cost reduction Potential Applications Wireless charging Multicopter Telecom Charger Server Drives SMPS Applications 48 V intermediate bus converter (IBC) Adapters and chargers Telecommunication infrastructure Designers who used this product also designed with BSS169 | N-Channel Depletion Mode MOSFET ISC027N10NM6 | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET ISC027N10NM6 | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET ISC027N10NM6 | N-Channel Power MOSFET

OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance

The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits.

Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.


Summary of Features

  • Compared to alternative products:
    • RDS(on) reduced by 30%
  • Improved FOM Qg x RDS(on) by 29%
  • Improved FOM Qgd x RDS(on) by 46%
  • Optimized for synchronous rectification
  • Suited for ORing circuits
  • RoHS compliant - halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • Very low voltage overshoot
  • Reduced need for snubber circuit
  • System cost reduction

Potential Applications

  • Wireless charging
  • Multicopter
  • Telecom
  • Charger
  • Server
  • Drives
  • SMPS

Applications

  • 48 V intermediate bus converter (IBC)
  • Adapters and chargers
  • Telecommunication infrastructure

Designers who used this product also designed with


  • BSS169 |
    N-Channel Depletion Mode MOSFET
  • ISC027N10NM6 |
    N-Channel Power MOSFET
  • BSS169 |
    N-Channel Depletion Mode MOSFET
  • ISC027N10NM6 |
    N-Channel Power MOSFET
  • BSS169 |
    N-Channel Depletion Mode MOSFET
  • ISC027N10NM6 |
    N-Channel Power MOSFET
Supplier's Site Datasheet
Transistors - BSZ018N04LS6 - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSZ018N04LS6
Transistors BSZ018N04LS6
TSDSON-8(3.3x3.3) MOSFETs ROHS

TSDSON-8(3.3x3.3) MOSFETs ROHS

Supplier's Site
PG-TSDSON-8 Pre-ordered transistors RoHS - 376-BSZ018N04LS6 - Utmel Electronic Limited
Hong Kong, China
PG-TSDSON-8 Pre-ordered transistors RoHS
376-BSZ018N04LS6
PG-TSDSON-8 Pre-ordered transistors RoHS 376-BSZ018N04LS6
PG-TSDSON-8 Pre-ordered transistors RoHS

PG-TSDSON-8 Pre-ordered transistors RoHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) Utmel Electronic Limited
Product Category Power MOSFET Transistors Transistors
Product Number BSZ018N04LS6 BSZ018N04LS6 376-BSZ018N04LS6
Product Name N-Channel Power MOSFET Transistors PG-TSDSON-8 Pre-ordered transistors RoHS
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0018 ohms
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