The BSP89 is an N-channel enhancement mode MOSFET designed for small-signal applications, featuring a 240 V drain-source breakdown voltage and a continuous drain current of 0.35 A at 25°C. It is packaged in a PG-SOT223 case and is RoHS compliant and halogen-free per IEC 61249-2-21. The device is qualified to AEC-Q101 standards and has a dv/dt rating of 6 kV/µs. Its drain-source on-state resistance is 4.2 to 7.5 Ω, depending on gate voltage, and it operates with a gate-source voltage range of ±20 V. The junction and storage temperature range is -55°C to +150°C, with a power dissipation of 1.8 W at 25°C.
N-Channel Small Signal MOSFET 240 V in SOT-223 package
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
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MOSFET N-Channel 240V 0.35A SOT223
MOSFET N-Channel 240V 0.35A SOT223
| Infineon Technologies AG | RS Components, Ltd. | RS Components, Ltd. | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSP89 | 4452281 | 4452281P |
| Product Name | Small Signal/Small Power MOSFET | MOSFETs | MOSFETs |
| Polarity | N-Channel; N | N-Channel | N-Channel |
| Transistor Technology / Material | Si/SiC | ||
| Operating Mode | Enhancement | ||
| rDS(on) | 6 ohms | ||
| TJ | 150 C (302 F) |
