Infineon Technologies AG N-Channel Power MOSFET BSZ0502NSI

Description
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features Best-in-class on-state resistance Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd) RoHS compliant and halogen free Optimized EMI behavior (integrated damping network) Benefits Highest efficiency Highest power density with S3O8 or Power Block package Reduction of overall system costs Operation at high-switching frequency Potential Applications Desktop and server Single-phase and multiphase POL CPU/GPU VR in notebooks High power density voltage regulator Or-ing E-fuse Applications Edge computing
  • N-Channel Power MOSFET - BSZ0502NSI - Infineon Technologies AG
    Infineon Technologies AG
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Description
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features Best-in-class on-state resistance Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd) RoHS compliant and halogen free Optimized EMI behavior (integrated damping network) Benefits Highest efficiency Highest power density with S3O8 or Power Block package Reduction of overall system costs Operation at high-switching frequency Potential Applications Desktop and server Single-phase and multiphase POL CPU/GPU VR in notebooks High power density voltage regulator Or-ing E-fuse Applications Edge computing
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Datasheet
Datasheet Summary
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The BSZ0502NSI is an N-channel MOSFET optimized for high-performance buck converters, featuring a monolithic integrated Schottky-like diode. It is packaged in a PG-TSDSON-8 FL case measuring 3.20 mm to 3.40 mm in length and width, with a height of 0.90 mm to 1.10 mm. The device has a drain-source voltage rating of 30 V, a maximum continuous drain current of 100 A at 25°C case temperature, and a drain-source on-resistance of 2.8 mΩ at VGS=4.5 V. It is 100% avalanche tested with a single-pulse avalanche energy rating of 30 mJ. The part is RoHS compliant and halogen-free according to IEC 61249-2-21.

Datasheet Summary
Powered by GS/AI

The BSZ0502NSI is an N-channel MOSFET optimized for high-performance buck converters, featuring a monolithic integrated Schottky-like diode. It is packaged in a PG-TSDSON-8 FL case measuring 3.20 mm to 3.40 mm in length and width, with a height of 0.90 mm to 1.10 mm. The device has a drain-source voltage rating of 30 V, a maximum continuous drain current of 100 A at 25°C case temperature, and a drain-source on-resistance of 2.8 mΩ at VGS=4.5 V. It is 100% avalanche tested with a single-pulse avalanche energy rating of 30 mJ. The part is RoHS compliant and halogen-free according to IEC 61249-2-21.

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Supplier Links
N-Channel Power MOSFET - BSZ0502NSI - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSZ0502NSI
N-Channel Power MOSFET BSZ0502NSI
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features Best-in-class on-state resistance Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd) RoHS compliant and halogen free Optimized EMI behavior (integrated damping network) Benefits Highest efficiency Highest power density with S3O8 or Power Block package Reduction of overall system costs Operation at high-switching frequency Potential Applications Desktop and server Single-phase and multiphase POL CPU/GPU VR in notebooks High power density voltage regulator Or-ing E-fuse Applications Edge computing

With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.


Summary of Features

  • Best-in-class on-state resistance
  • Benchmark switching performance (lowest figure of merits R on x Q g and
    R on x Q gd)
  • RoHS compliant and halogen free
  • Optimized EMI behavior (integrated
    damping network)

Benefits

  • Highest efficiency
  • Highest power density with S3O8 or Power Block package
  • Reduction of overall system costs
  • Operation at high-switching frequency

Potential Applications

  • Desktop and server
  • Single-phase and multiphase POL
  • CPU/GPU VR in notebooks
  • High power density voltage regulator
  • Or-ing
  • E-fuse

Applications

  • Edge computing
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSZ0502NSI
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0028 ohms
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