The BSS169I is an N-channel depletion mode MOSFET in a PG-SOT23-3 package with a maximum drain-source voltage of 100 V and a maximum on-resistance of 12 Ω. It supports a continuous drain current of up to 0.19 A at 25 °C and a pulsed drain current of 0.76 A. The device is rated for a reverse diode dv/dt of 6 kV/μs and operates within a junction temperature range of -55 °C to 150 °C. Thermal resistance junction-to-ambient is 250 K/W. It is RoHS compliant, halogen-free according to AEC61249-2-21, and qualified to JEDEC JESD47, JESD22, and J-STD-020 standards for industrial applications.
N-channel depletion mode small signal transistor for industrial and consumer applications in SOT-23-3 package
The N-channel depletion mode MOSFET BSS169I in SOT-23-3 package features VDS 100 V and RDS(on),max of
12 Ohm.
With an optimal price/performance ratio and small footprint packages Infineon's small signal and small power MOSFETs are the best fit for a wide range of applications and circuits. These include low voltage drives, linear battery charger, battery protection, load switches, DC-DC converters, reverse polarity protection and many more.
Small signal/small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. Enhancement and depletion-mode options, as well as Industry qualification make Infineon’s portfolio the best fit for industry and consumer markets.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS169I |
| Product Name | N-Channel Depletion Mode MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| MOSFET Operating Mode | Depletion |
| VGS(off) | -2.9 to -1.8 volts |
