BSS126I is an N-channel depletion-mode MOSFET for industrial applications, housed in a PG-SOT23 package measuring 2.9 mm by 1.3 mm. It has a drain-source breakdown voltage of 600 V, a maximum continuous drain current of 0.017 A at 25 °C, and a drain-source on-state resistance of 750 Ω. The device is rated for a maximum junction temperature of 150 °C, a power dissipation of 0.50 W, and a reverse diode dv/dt of 6 kV/µs. It is Pb-free, RoHS compliant, halogen-free per IEC 61249-2-21, and fully qualified according to JEDEC for industrial applications.
600V N-Channel small signal depletion-mode MOSFET
Infineon is one of the few semiconductor manufacturers worldwide to offer depletion mode MOSFET. Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component, it is possible to realize a simple current regulator.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS126I |
| Product Name | N-Channel Depletion Mode MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| MOSFET Operating Mode | Depletion |
| VGS(off) | -2.7 to -1.6 volts |
