Infineon Technologies AG MOSFET BSZ058N03MSGXT

Description
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
Description
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
Datasheet
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N-channel MOSFET in a TSDSON-8 package with a drain-source voltage rating of 30 V, continuous drain current of 40 A at 25 °C, and on-resistance of 5.8 mΩ at 10 V gate-source voltage. The device is qualified to AEC-Q101 and RoHS compliant. Operating and storage temperature range is from -55 °C to +150 °C.

Datasheet Summary
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N-channel MOSFET in a TSDSON-8 package with a drain-source voltage rating of 30 V, continuous drain current of 40 A at 25 °C, and on-resistance of 5.8 mΩ at 10 V gate-source voltage. The device is qualified to AEC-Q101 and RoHS compliant. Operating and storage temperature range is from -55 °C to +150 °C.

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Sheung Wan, Hong Kong
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M

MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSZ058N03MSGXT
Product Name MOSFET
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