Infineon Technologies AG MOSFET BSZ058N03MSGXT

Description
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
Description
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
Datasheet
Datasheet Summary
Powered by GS/AI

N-channel MOSFET in a TSDSON-8 package with a drain-source voltage rating of 30 V, continuous drain current of 40 A at 25 °C, and on-resistance of 5.8 mΩ at 10 V gate-source voltage. The device is qualified to AEC-Q101 and RoHS compliant. Operating and storage temperature range is from -55 °C to +150 °C.

Datasheet Summary
Powered by GS/AI

N-channel MOSFET in a TSDSON-8 package with a drain-source voltage rating of 30 V, continuous drain current of 40 A at 25 °C, and on-resistance of 5.8 mΩ at 10 V gate-source voltage. The device is qualified to AEC-Q101 and RoHS compliant. Operating and storage temperature range is from -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M

MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSZ058N03MSGXT
Product Name MOSFET
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 2060137P - RS Components, Ltd.
RS Components, Ltd.
Specs
Package Type PowerDI3333
View Details
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD910023SALI - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
3 suppliers
 - LM5101AMX/NOPB - Rochester Electronics
Texas Instruments
Specs
Package Type SOIC8
Packing Method Tape Reel; Tape & Reel
View Details