The BSS159N is an N-channel depletion mode MOSFET designed for applications requiring controlled turn-on behavior, such as in-rush current limiting or voltage reference circuits. It is packaged in a PG-SOT-23 case and meets AEC-Q101 automotive qualification standards. The device has a maximum drain-source voltage of 60 V, a continuous drain current of 0.23 A at 25°C, and a drain-source on-state resistance up to 8 Ω. It is rated for a drain-source breakdown voltage of 60 V, a gate-source voltage of ±20 V, and an operating temperature range of -55°C to 150°C. The transistor is halogen-free, lead-free, and RoHS compliant, with a thermal resistance of 350 K/W and a dv/dt rating of 6 kV/µs. It is available with gate threshold voltage bands printed on the reel.
Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs.
Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel.
Summary of Features
Potential Applications
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Manufacturer: Infineon Technologies
Win Source Part Number: 1154921-BSS159N
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
| Infineon Technologies AG | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSS159N | 1154921-BSS159N |
| Product Name | N-Channel Depletion Mode MOSFET | END - OF - LIFE - BSS159N |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| MOSFET Operating Mode | Depletion | |
| VGS(off) | -3.5 to -2.4 volts |
