Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS806NL6327 BSS806NL6327

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1049747-BSS806NL6327
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 20 V
Input Capacitance: 529 pF
Number of Pins: 3
Rise Time: 9.9 ns
Fall Time: 3.7 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-236-3
Alternative Parts (Cross-Reference): BSS806NL6327BSS806N L6327;
Popularity: Low
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Max Power Dissipation: 500 mW
Turn-On Delay Time: 7.5 ns
Continuous Drain Current (ID): 2.3 A
Turn-Off Delay Time: 12 ns
Gate to Source Voltage (Vgs): 8 V
Rds On Max: 57 mΩ

Mosfet N-ch 20V 2.3A SOT23 Product overview: BSS806NL6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.3A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.3A, SOT23, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSS806NL6327 can be used for catalog matching and distributor lookup.