Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ018NE2LS BSZ018NE2LS

Manufacturer: Infineon Technologies
Win Source Part Number: 116057-BSZ018NE2LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TSDSON-8-FL
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 23A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 2800pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS Product overview: BSZ018NE2LS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 40A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSZ018NE2LS can be used for catalog matching and distributor lookup.